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Homepage Manufacturers SiTime Microsite: SiTime: Epoch

SiTime - Epoch Platform™

SiTime Precision Super-TCXO and OCXO Families for Telecom, Networking, and Industrial Timing

SiTime’s precision Super-TCXO and OCXO families span timing requirements from ±50 ppb Super-TCXO accuracy to ±1 ppb OCXO holdover. The portfolio includes the SiT5356 Stratum 3 Super-TCXO, the SiT5358 ±50 ppb Super-TCXO, and the SiT5811 12-hour holdover OCXO. Each device supports factory programmability across frequency, stability, supply voltage, and pull range, with I2C digital frequency tuning and LVCMOS or clipped-sine outputs. DualMEMS™ temperature sensing and TurboCompensation™ technology support the Super-TCXO families, maintaining timing accuracy under airflow, thermal perturbation, vibration, shock, and EMI.

 

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Product Series

GR-1244 Stratum 3 (SiT5356 and SiT5358)
The SiT5356 delivers ±100 ppb frequency stability, while the SiT5358 achieves ±50 ppb from -40°C to +105°C. Both devices reach 3×10⁻¹¹ ADEV at a 10-second averaging interval and maintain a ±1 ppb/°C frequency slope at a 0.5°C/min thermal ramp. Phase noise under vibration improves by 20× relative to quartz, reducing link drops in high-vibration environments. Power-supply noise rejection of 0.2 ps/mV removes the need for a dedicated LDO. Factory programmability supports frequencies from 1 to 60 MHz, pull ranges from ±6.25 to ±3200 ppm, and supply voltages from 2.25 to 3.63 V, eliminating quartz-related lead times and per-configuration costs.


Shortform Information about the specification is available here
OCXO (SiT5811)
The SiT5811 OCXO targets network synchronization, telecom, and precision instrumentation applications with strict holdover requirements. It delivers ±1 ppb over-temperature stability from -40°C to +95°C, a ±0.01 ppb/°C typical frequency slope (ΔF/ΔT), and 4×10⁻¹² HDEV at a 10-second averaging interval. Holdover extends to 12 hours under real-world conditions that include an 8°C temperature change, the ITU-T recommended profile, and 1 m/s airflow, with ±0.1 ppb/day aging. TimeFabric™ Holdover Extension can extend holdover to 24 hours for extended synchronization continuity. At 9.0 × 7.0 × 3.6 mm and 420 mW steady-state power, the SiT5811 reduces volume by 25× and power by 3× relative to comparable quartz OCXOs.

Shortform Information about the specification is available here

Applications

•    SONET/SDH Stratum 3
•    Synchronous Ethernet (G.8262, Options 1 and 2)
•    5G infrastructure (RRH, DU)
•    ITU-T G.8273.2 Class D
•    Small cells
•    Data center switches and routers
•    Core and edge routers
•    Optical transport (OTN, OLT)
•    IEEE 1588 boundary clocks and grandmasters
•    GNSS receivers and GNSS-disciplined timing modules
•    Timing servers
•    Cable modem termination systems (CMTS)
•    COSPAS-SARSAT
•    Broadband satellite
•    LiDAR and radar
•    Test and measurement
•    Smart meters
•    Wireless and backhaul

Documents

Datasheet SiT5356
Datasheet SiT5358

Features

•    DualMEMS™ and TurboCompensation™ temperature sensing for dynamic stability (SiT5356, SiT5358)
•    ±100 ppb over-temperature stability from -40°C to +105°C (SiT5356)
•    ±50 ppb over-temperature stability from -40°C to +105°C (SiT5358)
•    GR-1244 Stratum 3 compliant (SiT5356, SiT5358)
•    3×10⁻¹¹ ADEV at 10-second averaging interval (SiT5356, SiT5358)
•    ±1 ppb/°C frequency slope at 0.5°C/min thermal ramp (SiT5356, SiT5358)
•    20× improvement in phase noise under vibration vs. quartz (SiT5356, SiT5358)
•    Power-supply noise rejection (0.2 ps/mV); no dedicated LDO required (SiT5356, SiT5358)
•    ±1 ppb over-temperature stability from -40°C to +95°C (SiT5811)
•    ±0.01 ppb/°C typical frequency slope (ΔF/ΔT) (SiT5811)
•    12-hour holdover under real-world conditions (SiT5811)
•    4×10⁻¹² HDEV at 10-second averaging interval (SiT5811)
•    ±0.1 ppb/day aging (SiT5811)
•    TimeFabric™ Holdover Extension to 24 hours (SiT5811)
•    25× lower volume and 3× lower power vs. quartz OCXOs (SiT5811)
•    Factory-programmable frequency: 1 to 60 MHz (SiT5356, SiT5358); 10 to 60 MHz (SiT5811)
•    Pull ranges from ±6.25 to ±3200 ppm (SiT5356, SiT5358); ±3.125 to ±400 ppm (SiT5811)
•    I2C digital frequency tuning (SiT5356, SiT5358); I2C and SPI with 5×10⁻¹⁴ resolution (SiT5811)
•    No activity dips or microjumps under thermal shock or fast temperature ramps
•    1 billion hours MTBF (SiT5356, SiT5358)
•    LVCMOS or clipped-sine output

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